symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 52 62.5 c/w n-ch 78 110 c/w r jl n-ch 48 60 c/w p-ch 50 62.5 c/w p-ch 73 110 c/w r jl p-ch 31 40 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state -50 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 4.7 4 30 2 1.44 -6.9 -8 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 25 drain-source voltage 12 gate-source voltage thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a AO4601 features n-channel p-channel v ds (v) = 30v -30v i d = 4.7a (v gs =10v) -8a (v gs = -20v) r ds(on) r ds(on) < 55m ? (v gs =10v) < 18m ? (v gs = - 20v) < 70m ? (v gs =4.5v) < 19m ? (v gs = - 10v) < 110m ? (v gs = 2.5v) the AO4601 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. standard product AO4601 is pb-free (meets rohs & sony 259 specifications). AO4601l is a green product ordering option. AO4601 and AO4601l are g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p-channel complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 7
AO4601 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1 1.4 v i d(on) 10 a 45 55 t j =125c 66 80 55 70 m ? 83 110 m ? g fs 8s v sd 0.8 1 v i s 2.5 a c iss 390 pf c oss 54.5 pf c rss 41 pf r g 3 ? q g 0.6 nc q gs 1.38 nc q gd 4.34 nc t d(on) 3.3 ns t r 1ns t d(off) 21.7 ns t f 2.1 ns t rr 12 ns q rr 6.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =4a i f =4a, di/dt=100a/ s gate resistance turn-off delaytime turn-off fall time body diode reverse recovery time diode forward voltage i s =1a,v gs =0v output capacitance reverse transfer capacitance maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v m ? v gs =4.5v, i d =3a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v gs =2.5v, i d =2a v ds =5v, i d =4a r ds(on) static drain-source on-resistance v gs =10v, i d =4a forward transconductance v gs =10v, v ds =15v, r l =3.75 ? , r gen =6 ? i f =4a, di/dt=100a/ s gate source charge gate drain charge turn-on delaytime turn-on rise time a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : sept 2005 www.freescale.net.cn 2 / 7
ao 46 0 1 n-channel typical electrical and thermal characteristics 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 25 50 75 100 125 150 0246810 i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5 v v gs =10 v i d =2a 25c 125c www.freescale.net.cn 3 / 7
ao 4601 n-channel typical electrical and thermal characteristics 0 1 2 3 4 5 012345 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1 1 s 1 0s dc r ds(on) limite d t j(max) =150c t a =25c v ds =15v i d =4a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 7
AO4601 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2.5 -3 v i d(on) 40 a 16 19 t j =125c 20.5 25 15 18 m ? 33 m ? g fs 16 21 s v sd -0.75 -1 v i s -2.6 a c iss 2076 pf c oss 503 pf c rss 302 pf r g 2 ? q g 39 nc q gs 8nc q gd 11.4 nc t d(on) 12.7 ns t r 7ns t d(off) 25.2 ns t f 12 ns t rr 32 ns q rr 26 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v a gate-body leakage current v ds =0v, v gs =25v gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-10v, i d =-8a m ? v gs =-20v, i d =-8a v gs =-4.5v, i d =-5a forward transconductance v ds =-5v, i d =-8a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge gate drain charge turn-on delaytime v gs =-10v, v ds =-15v, r l =1.8 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-8a, di/dt=100a/ s body diode reverse recovery charge i f =-8a, di/dt=100a/ s a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : sept 2005 www.freescale.net.cn 5 / 7
ao4 601 p-channel typical electrical and thermal characteristics 0 10 20 30 40 50 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -5.5v -10v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 0 10 20 30 40 50 60 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-6v v gs =-10 v i d =-8a 25c 125c i d =-8a -6v -8v www.freescale.net.cn 6 / 7
AO4601 p-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1 s 10s dc r ds(on) limite d t j(max) =150c t a =25c v ds =-15v i d =-8a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 7
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